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IHW30N160R2
Soft Switching Series
TrenchStop(R) Reverse Conducting (RC-)IGBT with monolithic body diode
Features: * Powerful monolithic Body Diode with very low forward voltage * Body diode clamps negative voltages * Trench and Fieldstop technology for 1600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior * NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) * Low EMI * Qualified according to JEDEC1 for target applications * Pb-free lead plating; RoHS compliant * Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications: * Inductive Cooking * Soft Switching Applications Type IHW30N160R2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE 1600V, Tj 175C) Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25C, tp = 10ms, sine halfwave TC = 25C, tp 2.5s, sine halfwave TC = 100C, tp 2.5s, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 10 s, D < 0.01) Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Ptot Tj Tstg IFpuls IFSM Symbol VCE IC Value 1600 60 30 90 90 60 30 90 50 130 120 20 25 312 -40...+175 -55...+175 260 V W C A Unit V VCE 1600V IC 30A VCE(sat),Tj=25C 1.8V Tj,max 175C Marking H30R1602 Package PG-TO-247-3
C
G
E
PG-TO-247-3
ICpuls IF
VGE
1
J-STD-020 and JESD-022 1 Rev. 2.1 Nov 09
Power Semiconductors
IHW30N160R2
Soft Switching Series
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0 V , I C =500 A VCE(sat) V G E = 15 V, I C =30A T j = 25C T j = 150 C T j = 175 C Diode forward voltage VF VGE=0V, IF=30A T j = 25C T j = 150 C T j = 175 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C =0 .75mA, V C E =V G E V C E = 16 00 V, VGE=0V T j = 25C T j = 175 C Gate-emitter leakage current Transconductance Integrated gate resistor IGES gfs RGint V C E = 0 V , V G E =20V V C E =20V, I C =30A 22.5 none 5 2500 100 nA S 5.1 1.65 2.0 2.0 5.8 2.0 6.4 1.8 2.25 2.35 2.1 V 1600 Symbol Conditions Value min. Typ. max. Unit RthJA 40 RthJCD 0.48 K/W RthJC 0.48 Symbol Conditions Max. Value Unit
A
Power Semiconductors
2
Rev. 2.1
Nov 09
IHW30N160R2
Soft Switching Series
Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Ciss Coss Crss QGate LE V C E =25V, VGE=0V, f=1MHz V C C = 12 80 V, I C =30A;V G E = 1 5 V 2740 68.1 58.7 94 13 nC nH pF
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(off) tf Eon Eoff Ets T j = 25C , V C C = 60 0 V, I C =30A V G E =0 /1 5V, R G = 1 0 525 38.3 2.53 2.53 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Characteristic Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(off) tf Eon Eoff Ets T j = 175 C V C C = 60 0 V, I C =30A, V G E = 0 /1 5V, R G = 1 0 564 111 4.37 4.37 mJ ns Symbol Conditions Value min. Typ. max. Unit
Power Semiconductors
3
Rev. 2.1
Nov 09
IHW30N160R2
Soft Switching Series
tp=1s 10s
80A
20s
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
TC=80C 60A TC=110C
10A
50s
40A
Ic
20A
1A
500s 5ms DC
0A 10Hz
100Hz
1kHz
10kHz
100kHz
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency for hard switching (turn-off) (Tj 175C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 10)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. IGBT Safe operating area (D = 0, TC = 25C, Tj 175C;VGE=15V)
0.1A 1V
10V
100V
1000V
300W 250W 200W 150W 100W 50W 0W 25C
50A
IC, COLLECTOR CURRENT
50C 75C 100C 125C 150C
Ptot, DISSIPATED POWER
40A
30A
20A
10A
0A 25C
50C
75C
100C 125C
150C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C)
TC, CASE TEMPERATURE Figure 4. DC Collector current as a function of case temperature (VGE 15V, Tj 175C)
Power Semiconductors
4
Rev. 2.1
Nov 09
IHW30N160R2
Soft Switching Series
80A 70A VGE=20V
80A 70A VGE=20V 15V 13V 11V 9V 7V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
60A 50A 40A 30A 20A 10A 0A 0V
15V 13V 11V 9V 7V
60A 50A 40A 30A 20A 10A 0A
1V
2V
3V
0V
1V
2V
3V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C)
80A 70A
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
3.0V 2.5V 2.0V 1.5V 1.0V 0.5V 0.0V 0C 50C 100C
IC=60A
IC, COLLECTOR CURRENT
60A 50A 40A 30A TJ=175C 20A 10A 0A 25C
IC=30A IC=15A
0V
2V
4V
6V
8V
10V
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE =15V)
Power Semiconductors
5
Rev. 2.1
Nov 09
IHW30N160R2
Soft Switching Series
td(off)
td(off)
1000ns
t, SWITCHING TIMES
100ns
tf
t, SWITCHING TIMES
100ns
tf
10ns
0A
10A
20A
30A
40A
50A
60A
70A
10
20
30
40
50
60
70
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE=600V, VGE=0/15V, RG=10, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175C, VCE=600V, VGE=0/15V, IC=30A, Dynamic test circuit in Figure E)
td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
6V
t, SWITCHING TIMES
tf 100ns
5V
max.
4V
typ. min.
3V
10ns 25C
50C
75C
100C
125C
150C
2V -50C
0C
50C
100C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=30A, RG=10, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.15mA)
Power Semiconductors
6
Rev. 2.1
Nov 09
IHW30N160R2
Soft Switching Series
7.0mJ
Eoff
E, SWITCHING ENERGY LOSSES
6.0mJ 5.0mJ 4.0mJ 3.0mJ 2.0mJ 1.0mJ 0.0mJ 0A 10A 20A 30A 40A 50A Eoff
E, SWITCHING ENERGY LOSSES
6.0mJ
5.0mJ
4.0mJ
10 20 30 40 50 60 70 80
IC, COLLECTOR CURRENT Figure 13. Typical turn-off energy as a function of collector current (inductive load, TJ=175C, VCE=600V, VGE=0/15V, RG=10, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical turn-off energy as a function of gate resistor (inductive load, TJ=175C, VCE=600V, VGE=0/15V, IC=30A, Dynamic test circuit in Figure E)
Eoff 4.0mJ
7.5mJ
Eoff
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
50C 75C 100C 125C 150C
7.0mJ 6.5mJ 6.0mJ 5.5mJ 5.0mJ 4.5mJ
3.5mJ
3.0mJ
2.5mJ
2.0mJ 25C
4.0mJ 600V
700V
800V
900V
1000V 1100V
TJ, JUNCTION TEMPERATURE Figure 15. Typical turn-off energy as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=30A, RG=10, Dynamic test circuit in Figure E)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical turn-off energy as a function of collector emitter voltage (inductive load, TJ=175C, VGE=0/15V, IC=30A, RG=10, Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.1
Nov 09
IHW30N160R2
Soft Switching Series
Ciss
15V
VGE, GATE-EMITTER VOLTAGE
320V
10V
5V
c, CAPACITANCE
100pF
1280V
1nF
Coss
0V
Crss
0nC 25nC 50nC 75nC 100nC 125nC
0V
10V
20V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=30 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5
10 K/W
-1
0.2 0.1 0.05 0.02
R,(K/W) 0.2 0.1514 0.1284
R1
10 K/W
-1
0.2 0.1 0.05 0.02 0.01 single pulse 1s 10s 100s
C1=1/R1 C2=2/R2
10 K/W
-2
0.01
, (s) -1 1.51*10 -2 1.14*10 -4 8.98*10
R2
R,(K/W) 0.1385 0.1354 0.1176 0.087
R1
, (s) -2 5.49*10 -3 7.70*10 -4 6.83*10 -5 1.94*10
R2
single pulse
C1= 1/R1 C2= 2/R2
10 K/W
-3
10 K/W
-2
10s
100s
1ms
10ms
100ms
1s
1ms
10ms 100ms
tP, PULSE WIDTH Figure 19. IGBT transient thermal resistance (D = tp / T)
tP, PULSE WIDTH Figure 20. Diode transient thermal impedance as a function of pulse width (D=tP/T)
Power Semiconductors
8
Rev. 2.1
Nov 09
IHW30N160R2
Soft Switching Series
60A 50A 40A 30A 20A 10A 0A TJ=25C 175C
2.5V
IF=60A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
2.0V
30A 15A
1.5V
1.0V
0.5V
0.0V
0.0V
0.5V
1.0V
1.5V
2.0V
2.5V
0C
50C
100C
150C
VF, FORWARD VOLTAGE Figure 21. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 22. Typical diode forward voltage as a function of junction temperature
Power Semiconductors
9
Rev. 2.1
Nov 09
IHW30N160R2
Soft Switching Series
Power Semiconductors
10
Rev. 2.1
Nov 09
IHW30N160R2
Soft Switching Series
i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Power Semiconductors
11
Rev. 2.1
Nov 09
IHW30N160R2
Soft Switching Series
Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved.
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Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
12
Rev. 2.1
Nov 09

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